33v high precise voltage reference az574 preliminary datasheet 1 sep. 2005 rev. 1. 1 bcd semiconductor manufacturing limited general description the az574 is a monolithic integrated voltage stabi- lizer especially designed for tv tuners. the az574 is available in to-92-2 package. features low temperature coefficient low dynamic impedance typical reference voltage of 33v high cathode current capacity up to 30ma applications tv tuners figure 1. package type of az574 to-92-2
33v high precise voltage reference az574 preliminary datasheet 2 sep. 2005 rev. 1. 1 bcd semiconductor manufacturing limited figure 2. pin configuration of az574 (top view) z package (to-92-2) pin configuration anode 1 2 cathode functional block diagram figure 3. functional block diagram of az574 v ref cathode anode 2 1
preliminary datasheet 33v high precise voltage reference az574 3 sep. 2005 rev. 1. 1 bcd semiconductor manufacturing limited package temperature range part number marking id packing type tin lead lead free tin lead lead free to-92-2 -20 to 75 o c az574z az574z-e1 az574z az574z-e1 bulk az574ztr AZ574ZTR-E1 az574z az574z-e1 ammo circuit type package z: to-92-2 e1: lead free blank: tin lead az574 - tr: ammo blank: bulk ordering information bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant.
33v high precise voltage reference az574 preliminary datasheet 4 sep. 2005 rev. 1. 1 bcd semiconductor manufacturing limited parameter symbol value unit cathode current i ka 40 ma power dissipation p d 700 (t a =75 o c) mw storage temperature t stg -40 to 125 o c note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating cond itions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. parameter symbol min max unit operating ambient temperature t a -20 75 o c operating cathode current i ka 30 ma recommended operating conditions absolute maximum ratings (note 1) parameter symbol conditions min typ max unit cathode voltage v ka i ka =5ma 31 35 v cathode voltage temperature drift ? v ka / ? t i ka =5ma, t a =-20 to 75 o c (note 2) 0.6 mv/ o c dynamic impedance z ka i ka =5ma, f=1khz, i ac =0.5ma 5 12 ? (t a =25 o c, unless otherwise specified.) electrical characteristics note 2: cathode voltage temperature drift is defined as maximum (worst case) change divided by the total tem- perature range. 1.5
preliminary datasheet 33v high precise voltage reference az574 5 sep. 2005 rev. 1. 1 bcd semiconductor manufacturing limited typical performance characteristics figure 6. cathode voltage temperat ure drift vs. cathode current 0246810 -4 -3 -2 -1 0 1 2 3 4 cathode voltage temperature drift (mv/ 0 c) cathode current (ma) -25 to 75 o c 0246810 0 20 40 60 80 dynamic impedance ( ?) cathode current (ma) i ac =i ka /10 f=1khz figure 5. dynamic impedance vs. cathode current 0 5 10 15 20 25 30 -1.00 -0.75 -0.50 -0.25 0.00 0.25 0.50 0.75 1.00 cathode voltage variation (%) cathode current (ma) t a =25 o c figure 4. cathode voltage va riation vs. cathode current -40-20 0 20406080100 32.0 32.1 32.2 32.3 32.4 cathode voltage (v) temperature ( o c) i ka =5ma figure 7. cathode voltage vs. temperature
33v high precise voltage reference az574 preliminary datasheet 6 sep. 2005 rev. 1. 1 bcd semiconductor manufacturing limited v b a az574 r s 2 1 v i ka v ka az574 r s v v ka typical performance ch aracteristics (continued) figure 9. supply voltage variation vs. cathode current 2345678 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 supply voltage variation (v) cathode current (ma) r s =10k ? r s =20k ? figure 8. cathode voltage variation vs. time 0 102030405060 0.0 0.5 1.0 1.5 2.0 2.5 3.0 cathode voltage variation (mv) time (min.) i ka =5ma
preliminary datasheet 33v high precise voltage reference az574 7 sep. 2005 rev. 1. 1 bcd semiconductor manufacturing limited typical application figure 10. typical application of az574 agc vt band1 band2 mb (5v) if b1 110v + + + tuner tuning signal az574
33v high precise voltage reference az574 preliminary datasheet 8 sep. 2005 rev. 1. 1 bcd semiconductor manufacturing limited mechanical dimensions to-92-2 unit: mm(inch) 0.360(0.014) 0.510(0.020) 1.100(0.043) 1.400(0.055) ! 1.600(0.063) max 4.400(0.173) 4.700(0.185) 4.300(0.169) 4.700(0.185) 0.380(0.015) 0.550(0.022) 14.100(0.555) 14.500(0.571) 3.300(0.130) 3.700(0.146) 2.500(0.098) 3.100(0.122) 1.270(0.050) typ 2.440(0.096) 2.640(0.104) 0.000(0.000) 0.380(0.015) 3.430(0.135) min
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office 27b, tower c, 2070, middle shen nan road, shenzhen 518031, china tel: +86-755-8368 3987, fax: +86-755-8368 3166 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808, fax: +886-2-2656 2806 usa office bcd semiconductor corporation 3170 de la cruz blvd., suite 105, santa clara, ca 95054-2411, u.s.a tel: +1-408-988 6388, fax: +1-408-988 6386 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com
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